Bond Line Thickness Characterization for QFN Package Robustness
Bryan Christian S. Bacquian *
New Product Development & Introduction, STMicroelectronics, Inc., Calamba City, Laguna, 4027, Philippines.
Edwin M. Graycochea Jr
New Product Development & Introduction, STMicroelectronics, Inc., Calamba City, Laguna, 4027, Philippines.
Frederick Ray I. Gomez
New Product Development & Introduction, STMicroelectronics, Inc., Calamba City, Laguna, 4027, Philippines.
Rennier S. Rodriguez
New Product Development & Introduction, STMicroelectronics, Inc., Calamba City, Laguna, 4027, Philippines.
*Author to whom correspondence should be addressed.
Abstract
The paper focused on the evaluation of quad-flat no-leads (QFN) semiconductor package with small silicon die on different machine platforms to achieve a higher bond line thickness (BLT) of greater than 30 µm. The characterization or evaluation was narrowed down into two main diebonding machines with the objective of attaining a higher BLT for small die. High BLT capability is desired to generate clearance for the shrinkage of the glue, henceforth mitigating the glue voids. Diebond Machine 2 was able to achieve the target BLT with 30.89 µm average compared to 18.25 µm for Machine 1. Moreover, the target BLT range could only be achieved in Machine 2 only. For future works, the machine and configuration could be used for devices with comparable requirement.
Keywords: QFN, diebond process, glue, BLT